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ZXMN6A09DN8TC bảng dữ liệu(PDF) 2 Page - Zetex Semiconductors

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PROVISIONAL ISSUE D - AUGUST 2001
ZXMN6A09DN8
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
60
V
Gate Source Voltage
V
GS
20
V
Continuous Drain Current (V
GS=10V; TA=25°C)(b)(d)
(V
GS=10V; TA=70°C)(b)(d)
(V
GS=10V; TA=25°C)(a)(d)
I
D
5.2
4.1
3.9
A
Pulsed Drain Current (c)
I
DM
17.6
A
Continuous Source Current (Body Diode) (b)
I
S
3.5
A
Pulsed Source Current (Body Diode)(c)
I
SM
15
A
Power Dissipation at T
A=25°C (a)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/°C
Power Dissipation at T
A=25°C (a)(e)
Linear Derating Factor
P
D
1.81
14.5
W
mW/°C
Power Dissipation at T
A=25°C (b)(d)
Linear Derating Factor
P
D
2.16
17.3
W
mW/°C
Operating and Storage Temperature Range
T
j:Tstg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
RθJA
100
°C/W
Junction to Ambient (a)(e)
RθJA
69
°C/W
Junction to Ambient (b)(d)
RθJA
58
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum
junction temperature.
(d) For device with one active die
(e) For device with two active die running at equal power.



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