STPS61L60CT datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

Characteristics

STPS61L60C

2/8

Doc ID 15641 Rev 1

Characteristics

When the diodes 1 and 2 are used simultaneously :

ΔTj(diode 1) = P(diode1) x R

th(j-c)(Per diode) + P(diode 2) x Rth(c).

To evaluate the conduction losses use the following equation:

P = 0.44 x IF(AV) + 0.006 x IF

(RMS)

Table 2.

Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

IF(RMS)

RMS forward voltage

IF(AV)

Average forward current

δ = 0.5

Tc = 125 °C

Tc = 120 °C

Per diode

Per device

IFSM

Surge non repetitive forward

current

tp = 10 ms sinusoidal

T0-247

T0-220AB

530

400

PARM

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C

11500

Tstg

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature (1)

150

°C

condition to avoid runaway for a diode on its own heatsink

dPtot

dTj

---------------

Rth j

–

()

--------------------------

Table 3.

Thermal resistances

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-247

Per diode

Total

0.95

0.6

°C/W

TO-220AB

Per diode

Total

1.1

0.7

Rth(c)

Coupling

TO-247

0.25

TO-220AB

0.3

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

0.8

Tj = 125 °C

150

350

(2)

Forward voltage drop

Tj = 25 °C

IF = 5 A

0.360

Tj = 125 °C

IF = 5 A

0.255

Tj = 25 °C

IF = 15 A

0.460

0.540

Tj = 125 °C

IF = 15 A

0.415

0.480

Tj = 25 °C

IF = 30 A

0.580

0.660

Tj = 125 °C

IF = 30 A

0.560

0.620

Pulse test: tp = 5 ms, δ < 2%

Pulse test: tp = 380 µs, δ < 2%

STPS61L60CT bảng dữ liệu(PDF) 2 Page - STMicroelectronics

STPS61L60CT bảng dữ liệu(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8

bảng dữ liệu tải về

Link URL