SSM6N35FE datasheet(2/5 Pages) TOSHIBA

2 / 5 page

SSM6N35FE

2008-03-10

Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0V

⎯

±10

μA

Drain–source breakdown voltage

V (BR) DSS

ID = 0.1 mA, VGS = 0V

⎯

Drain cutoff current

IDSS

VDS = 20 V, VGS = 0V

⎯

μA

Gate threshold voltage

Vth

VDS = 3 V, ID = 1 mA

0.4

⎯

1.0

Forward transfer admittance

⏐Yfs⏐

VDS = 3 V, ID = 50 mA

(Note 2)

115

⎯

ID = 50 mA, VGS = 4 V

(Note 2)

⎯

1.5

ID = 50 mA, VGS = 2.5 V

(Note 2)

⎯

ID = 5 mA, VGS = 1.5 V

(Note 2)

⎯

Drain–source ON-resistance

RDS (ON)

ID = 5 mA, VGS = 1.2 V

(Note 2)

⎯

Input capacitance

Ciss

⎯

9.5

⎯

Reverse transfer capacitance

Crss

⎯

4.1

⎯

Output capacitance

Coss

VDS = 3 V, VGS = 0V, f = 1 MHz

⎯

9.5

⎯

Turn-on time

ton

⎯

115

⎯

Switching time

Turn-off time

toff

VDD = 3 V, ID = 50 mA,

VGS = 0 to 2.5 V

⎯

300

⎯

Drain–source forward voltage

VDSF

ID = - 180 mA, VGS = 0V

(Note 2)

⎯

-0.9

-1.2

Note 2: Pulse test

Switching Time Test Circuit (Q1, Q2 Common)

(a) Test Circuit

(b) VIN

Usage Considerations

Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the

SSM6N35FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than

Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).

Take this into consideration when using the device.

Handling Precaution

When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is

protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that

come into direct contact with devices should be made of antistatic materials.

VDD = 3 V

D.U.

≤ 1%

VIN: tr, tf < 5 ns

(Zout = 50 Ω)

Common Source

= 25°C

VDD

OUT

2.5 V

μs

ton

90%

10%

0 V

2.5 V

10%

90%

toff

VDD

VDS (ON)

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