PMST2222A datasheet(3/7 Pages) NXP

3 / 7 page

1999 Apr 22

NXP Semiconductors

Product data sheet

NPN switching transistors

PMST2222; PMST2222A

THERMAL CHARACTERISTICS

Note

Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 50 V

−

PMST2222

IE = 0; VCB = 50 V; Tj = 125 °C

−

µA

collector cut-off current

IE = 0; VCB = 60 V

−

PMST2222A

IE = 0; VCB = 60 V; Tj = 125 °C

−

µA

IEBO

collector cut-off current

IC = 0; VEB = 3 V

−

hFE

DC current gain

IC = 0.1 mA; VCE = 10 V

−

IC = 1 mA; VCE = 10 V

−

IC = 10 mA; VCE = 10 V

−

IC = 10 mA; VCE = 10 V; Tamb = −55 °C 35

−

IC = 150 mA; VCE = 1 V; note 1

−

IC = 150 mA; VCE = 10 V; note 1

100

300

DC current gain

IC = 500 mA; VCE = 10 V; note 1

PMST2222

−

PMST2222A

−

VCEsat

collector-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1

−

400

PMST2222

IC = 500 mA; IB = 50 mA; note 1

−

1.6

collector-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1

−

300

PMST2222A

IC = 500 mA; IB = 50 mA; note 1

−

VBEsat

base-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1

−

1.3

PMST2222

IC = 500 mA; IB = 50 mA; note 1

−

2.6

base-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1

0.6

1.2

PMST2222A

IC = 500 mA; IB = 50 mA; note 1

−

collector capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz

−

emitter capacitance

IC = ic = 0; VEB = 0.5 V; f = 1 MHz

PMST2222

−

PMST2222A

−

transition frequency

IC = 20 mA; VCE = 20 V; f = 100 MHz

PMST2222

250

−

MHz

PMST2222A

300

−

MHz

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