PMD9002D datasheet(8/15 Pages) NXP

8 / 15 page

PMD9002D_1

Product data sheet

Rev. 01 — 20 November 2006

8 of 15

NXP Semiconductors

PMD9002D

MOSFET driver

VCE =5V

(1) Tamb = 150 °C

(2) Tamb =25 °C

(3) Tamb = −40 °C

IC/IB =20

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −40 °C

Fig 5.

TR1: DC current gain as a function of collector

current; typical values

Fig 6.

TR1: Collector-emitter saturation voltage as a

function of collector current; typical values

VCE = 0.3 V

(1) Tamb = −40 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

VCE =5V

(1) Tamb = −40 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

Fig 7.

TR1: On-state input voltage as a function of

collector current; typical values

Fig 8.

TR1: Off-state input voltage as a function of

collector current; typical values

IC (mA)

10−1

102

006aaa030

102

103

hFE

(1)

(2)

(3)

IC (mA)

1102

006aaa031

10−1

VCEsat

(V)

10−2

(1)

(2)

(3)

006aaa032

IC (mA)

10−1

102

VI(on)

(V)

10−1

(2)

(1)

(3)

006aaa033

IC (mA)

10−2

10−1

VI(off)

(V)

10−1

(1)

(2)

(3)

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