ZXMHC3F381N8

Issue 1.0 - March 2009

2

© Diodes Incorporated

www.diodes.com

Absolute maximum ratings

Parameter

Symbol

N-

channel

P-

channel

Unit

Drain-Source voltage

30

-30

V

Gate-Source voltage

±20

±20

V

(b)

(b)

(a)

(f)

4.98

3.98

3.98

4.17

-4.13

-3.31

-3.36

-3.51

A

(c)

22.9

-19.6

A

(b)

2.0

-2.0

A

(c)

22.9

-19.6

A

(a)

Linear derating factor

0.87

6.94

W

mW/

°C

(b)

Linear derating factor

1.35

10.9

W

mW/

°C

(f)

Linear derating factor

0.95

7.63

0.98

7.81

W

mW/

°C

Operating and storage temperature range

-55 to 150

°C

Thermal resistance

Parameter

Symbol

Value

Unit

Junction to ambient

(a)

144

°C/W

Junction to ambient

(b)

92

°C/W

Junction to ambient

(d)

106

°C/W

Junction to ambient

(e)

254

°C/W

Junction to lead

(f)

131

128

°C/W

NOTES:

(a)

For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still

air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when

operating in a steady-state condition with one active die.

(b)

Same as note (a), except the device is measured at t

≤ 10 sec.

(c)

Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the

maximum junction temperature.

(d)

For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still

air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when

operating in a steady-state condition with one active die.

(e)

For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions; the device is measured when

operating in a steady-state condition with one active die.

(f)

Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state

condition with one active die.