2003 Mar 18

2

NXP Semiconductors

Product data sheet

PNP switching transistor

MMBT3906

FEATURES

• Collector current capability I

• Collector-emitter voltage V

APPLICATIONS

• General switching and amplification.

DESCRIPTION

PNP switching transistor in a SOT23 plastic package.

NPN complement: MMBT3904.

MARKING

Note

1.

∗ = p: Made in Hong Kong.

∗ = t: Made in Malaysia.

∗ = W: Made in China.

TYPE NUMBER

MARKING CODE(1)

MMBT3906

7B

∗

PINNING

PIN

DESCRIPTION

1

base

2

emitter

3

collector

handbook, halfpage

2

1

3

MAM256

Top view

2

3

1

Fig.1 Simplified outline (SOT23) and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

MAX.

UNIT

collector-emitter voltage

−40

V

collector current (DC)

−200

mA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

−40

V

collector-emitter voltage

open base

−

−40

V

emitter-base voltage

open collector

−

−6

V

collector current (DC)

−

−200

mA

peak collector current

−

−200

mA

peak base current

−

−100

mA

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C