IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFN240N15T2

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1. Pulse test, t

≤ 300μs; duty cycle, d ≤ 2%.

SOT-227B (IXFN) Outline

(M4 screws (4x) supplied)

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

125

210

S

C

iss

32

nF

C

oss

V

2280

pF

C

rss

270

pF

R

Gi

Gate Input Resistance

1.50

Ω

t

d(on)

48

ns

t

r

125

ns

t

d(off)

77

ns

t

f

145

ns

Q

g(on)

460

nC

Q

gs

V

125

nC

Q

gd

130

nC

R

thJC

0.18

°C/W

R

thCS

0.05

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

240

A

I

SM

Repetitive, Pulse Width Limited by T

JM

960

A

V

SD

I

1.2

V

t

rr

140

ns

Q

RM

410

nC

I

RM

8.2

A

I

V

Resistive Switching Times

V

R