BLF878 datasheet(2/18 Pages) NXP

2 / 18 page

BLF878_2

Product data sheet

Rev. 02 — 15 June 2009

2 of 18

NXP Semiconductors

BLF878

UHF power LDMOS transistor

I Integrated ESD protection

I Advanced ﬂange material for optimum thermal behavior and reliability

I Excellent ruggedness

I High power gain

I High efﬁciency

I Designed for broadband operation (470 MHz to 860 MHz)

I Excellent reliability

I Internal input and output matching for high gain and optimum broadband operation

I Easy power control

I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

I Communication transmitter applications in the UHF band

I Industrial applications in the UHF band

Pinning information

[1]

Connected to ﬂange.

Ordering information

Table 2.

Pinning

Description

Simpliﬁed outline

Graphic symbol

drain1

drain2

gate1

gate2

source

[1]

sym117

Table 3.

Ordering information

Type number Package

Name Description

Version

BLF878

ﬂanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A

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