HAL855UT-K datasheet(34/42 Pages) MICRONAS

tên linh kiện	HAL855UT-K

Giải thích chi tiết về linh kiện	Programmable Linear Hall-Effect Sensor with Arbitrary Output Characteristic

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HAL855

DATA SHEET

Nov. 26, 2008; DSH000149_003EN

Micronas

Table 5–1: Telegram parameters (All voltages are referenced to GND.)

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Conditions

VDDL

Supply Voltage for Low Level

during Programming

5.5

VDDH

Supply Voltage for High Level

during Programming

6.8

8.0

8.5

Rise Time

−−

0.05

Fall Time

−−

0.05

tp0

Bit Time on VDD

1.7

1.75

1.8

tp0 is defined through the Sync Bit

tpOUT

Bit Time on Output Pin

tpOUT is defined through the

Acknowledge Bit

tp1

Voltage Change for Logical 1

1, 3

% of tp0 or tpOUT

tPROG

Programming Time for EEPROM

100

105

VDD,PROG

Supply Voltage during

Programming

4.9

5.1

trp

Rise Time of Charging Pulse

0.2

0.5

tfp

Fall Time of Charging Pulse

−

1ms

Delay Time of Charging Pulse

after Acknowledge

10.5

0.7

1ms

Vact

Voltage for an Activate Pulse

0.5

tact

Duration of an Activate Pulse

0.05

0.1

−

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