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HAL575SF-K bảng dữ liệu(PDF) 34 Page - Micronas |
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HAL575SF-K bảng dữ liệu(HTML) 34 Page - Micronas |
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34 / 36 page ![]() HAL57x, HAL58x DATA SHEET 34 Dec. 22, 2008; DSH000145_003EN Micronas 5.4. Ambient Temperature Due to internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temper- ature TA). At static conditions and continuous operation, the fol- lowing equation applies: For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the appli- cation. Due to the range of IDDhigh, self-heating can be critical. The junction temperature can be reduced with pulsed supply voltage. For supply times (ton) ranging from 30 μs to 1 ms, the following equation can be used: 5.5. EMC and ESD For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5–3). The series resistor and the capacitor should be placed as closely as pos- sible to the HAL sensor. Applications with this arrangement passed the EMC tests according to the product standards ISO 7637. Please contact Micronas for detailed information and first EMC and ESD results. Fig. 5–3: Recommded EMC test circuit T J T A ΔT + = ΔTI DD V DD × R × th = T Amax T Jmax ΔT – = TI DD V DD R th t on t off t on + -------------------- × × × = 1 VDD 2, x GND x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package VEMC 4.7 nF RV2 30 Ω RV1 100 Ω |
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