74HC2G02GD datasheet(5/13 Pages) NXP

5 / 13 page

74HC_HCT2G02_4

Product data sheet

Rev. 04 — 11 May 2009

5 of 13

NXP Semiconductors

74HC2G02; 74HCT2G02

Dual 2-input NOR gate

[1]

All typical values are measured at Tamb = 25 °C.

11. Dynamic characteristics

74HCT2G02

VIH

HIGH-level input

voltage

VCC = 4.5 V to 5.5 V

2.0

1.6

2.0

VIL

LOW-level input

voltage

VCC = 4.5 V to 5.5 V

1.2

0.8

VOH

HIGH-level output

voltage

VI = VIH or VIL

IO = −20 µA; VCC = 4.5 V

4.4

4.5

4.4

IO = −4.0 mA; VCC = 4.5 V

4.13

4.32

3.7

VOL

LOW-level output

voltage

VI = VIH or VIL

IO = 20 µA; VCC = 4.5 V

0.1

IO = 4.0 mA; VCC = 4.5 V

0.15

0.33

0.4

input leakage current

VI =VCC or GND; VCC = 5.5 V

±1.0

µA

ICC

supply current

VI =VCC or GND; IO =0A;

VCC = 5.5 V

µA

∆ICC

additional supply

current

per input; VCC = 4.5 V to 5.5 V;

VI =VCC − 2.1 V; IO =0A

375

410

µA

input capacitance

1.5

Table 7.

Static characteristics …continued

Voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C

Unit

Min

Typ[1]

Max

Min

Max

Table 8.

Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7.

Symbol Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C Unit

Min

Typ[1]

Max

Min

Max

74HC2G02

tpd

propagation delay nA and nB to nY; see Figure 6

[2]

VCC = 2.0 V

110

VCC = 4.5 V

VCC = 5.0 V; CL = 15 pF

VCC = 6.0 V

transition time

see Figure 6

[3]

VCC = 2.0 V

125

VCC = 4.5 V

VCC = 6.0 V

CPD

power dissipation

capacitance

VI = GND to VCC

[4]

-10-

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