SSM4501GSD datasheet(3/8 Pages) SSC

3 / 8 page

01/28/2008 Rev.1.00

www.SiliconStandard.com

P-CH ELECTRICAL CHARACTERISTICS

@TJ=25

oC (unless otherwise specified )

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-30

ΔBV

DSS/ΔTj

Breakdown Voltage Temperature Coefficient

Reference to 25℃, ID=-1mA

-0.03

V/℃

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V, ID=-5A

mΩ

VGS=-4.5V, ID=-3A

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1

-3

gfs

Forward Transconductance

VDS=-10V, ID=-5.3A

IDSS

Drain-Source Leakage Current ( Tj=25

oC)

VDS=-30V, VGS=0V

-1

Drain-Source Leakage Current ( Tj=70

oC)

VDS=-24V, VGS=0V

-25

IGSS

Gate-Source Leakage

VGS=-

Total Gate Charge

ID=-5A

Qgs

Gate-Source Charge

VDS=-24V

Qgd

Gate-Drain ("Miller") Charge

VGS=-4.5V

td(on)

Turn-on Delay Time

VDS=-15V

Rise Time

ID=-1A

td(off)

Turn-off Delay Time

RG=6Ω,VGS=-10V

Fall Time

RD=15Ω

-16

Ciss

Input Capacitance

VGS=0V

460

730

Coss

Output Capacitance

VDS=-25V

180

Crss

Reverse Transfer Capacitance

f=1.0MHz

130

SOURCE-DRAIN DIODE

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

VSD

Forward On Voltage

IS=-1.7A, VGS=0V

-1.2

trr

Reverse Recovery Time

IS=-5A, VGS=0V,

Qrr

Reverse Recovery Charge

dI/dt=100A/µs

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Mounted on 1 in

2 copper pad of FR4 board ; 90℃/W when mounted on Min. copper pad.

± 20V

±100

± 20V

±100

± 20V

SSM4501GSD

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