Notes:

1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.

2.Pulse width <300us, duty cycle <2%.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain-source breakdown voltage

700

-

-

V

Breakdown voltage temperature coefficient

-

0.6

-

V/°C

Static drain-source on-resistance

-

-

4.4

Ω

Gate threshold voltage

2

-

4

V

Forward transconductance

-

2

-

S

Drain-source leakage current

V

-

-

10

uA

-

-

100

uA

Gate-source leakage current

-

-

±100

nA

Total gate charge

2

-

12

20

nC

Gate-source charge

-

3

-

nC

Gate-drain ("Miller") charge

-

4

-

nC

Turn-on delay time

2

-

8.5

-

ns

Rise time

-

6

-

ns

Turn-off delay time

-

19

-

ns

Fall time

-

8

-

ns

Input capacitance

-

590

950

pF

Output capacitance

-

50

-

pF

Reverse transfer capacitance

f=1.0MHz

-

6

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

-

-

1.5

V

Reverse recovery time

-

407

-

ns

Reverse recovery charge

dI/dt=100A/µs

-

2110

-

nC

www.SiliconStandard.com

2 of 5

SSM03N70GP-H

9/29/2006 Rev.3.1

Gate resistance

f=1.0MHz

-

3.4

5.1

Ω