HFS12N65S datasheet(3/7 Pages) SEMIHOW

tên linh kiện	HFS12N65S

Giải thích chi tiết về linh kiện	650V N-Channel MOSFET

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◎ SEMIHOW REV.A0,Aug 2009

SD, Source-Drain Voltage [V]

GS, Gate-Source Voltage [V]

DS, Drain-Source Voltage [V]

Typical Characteristics

-1

500

1000

1500

2000

2500

3000

3500

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

∗ Note ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

0.0

0.5

1.0

1.5

2.0

D, Drain Current[A]

GS = 10V

GS = 20V

* Note : T

J = 25

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

DS = 325V

DS = 130V

DS = 520V

* Note : I

D = 12.0A

G, Total Gate Charge [nC]

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