HFS7N60 datasheet(3/7 Pages) SEMIHOW

3 / 7 page

◎ SEMIHOW REV.A0,Dec 2005

SD, Source-Drain Voltage [V]

※ Note :

1. VGS=0V

2. 250㎲ Pulse Test

150℃

25℃

0.2

0.4

0.6

0.8

1.0

1.2

1.4

101

100

10-1

D, Drain Current [A]

GS=20V

GS=10V

※ Note : T

J=25℃

※ Note :

1. VDS=40V

2. 250㎲ Pulse Test

150℃

25℃

-55℃

101

100

10-1

GS, Gate-Source Voltage [V]

Typical Characteristics

-1

300

600

900

1200

1500

1800

2100

2400

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

DS = 300V

DS = 120V

DS = 480V

* Note : I

D = 7.0A

G, Total Gate Charge [nC]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

DS, Drain-Source Voltage [V]

101

100

10-1

※ Note :

1. 250㎲ Pulse Test

2. TC=25℃

Top:

15.0V

10.0V

8.0V

7.0V

6.5V

6.0V

5.5V

Bottem

5.0V

10-1

100

101

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