FMMT591 datasheet(1/3 Pages) RECTRON

tên linh kiện	FMMT591

Giải thích chi tiết về linh kiện	SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

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RECTRON

SEMICONDUCTOR

SOT-23

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

OC ambient temperature unless otherwise specified.

Single phase , half wave, 60HZ, resistive or inductive load.

For capacitive load, derate current by 20%.

0.118(3.00)

0.012(0.30)

0.020(0.50)

0.003(0.08)

0.006(0.15)

0.110(2.80)

0.019(2.00)

0.071(1.80)

0.100(2.55)

0.089(2.25)

0.020(0.50)

0.012(0.30)

0.043(1.10)

0.035(0.90)

0.004(0.10)

0.000(0.00)

TECHNICAL SPECIFICATION

SOT-23 BIPOLAR TRANSISTORS

TRANSISTOR(PNP)

2006-3

ELECTRICAL CHARACTERISTICS ( @ TA = 25OC unless otherwise noted )

0.055(1.40)

0.047(1.20)

BASE

EMITTER

COLLECTOR

1

2

3

2

3

DC current gain (VCE= -5V, IC= -1mA)

DC current gain (VCE= -5V, IC= -500mA) (Note 1)

DC current gain (VCE= -5V, IC= -1A) (Note 1)

DC current gain (VCE= -5V, IC= -2A) (Note 1)

Collector cut-off current (VCB= -60V, IE=0)

Emitter cut-off current (VEB= -4V, IC=0)

Transition frequency (VCE= -10V, IC= -50mA, f=100MHZ)

Collector output capactitance (VCB= -10V, f=1MHZ)

Notes 1: Measured under pulsed conditions, Pulse width=300ms, Duty cycle < 2%.

Collector-emitter saturation voltage (IC= -1A, IB= -100mA) (Note 1)

Collector-emitter saturation voltage (IC= -500mA, IB= -50mA) (Note 1)

Base-emitter saturation voltage (IC= -1A, IB= -100mA) (Note 1)

Base-emitter voltage ((VCE= -5V, IC= -1A) (Note 1)

CHARACTERISTICS

SYMBOL

UNITS

-

-0.1

-

300

m

A

m

A

V

-

pF

MHZ

Collector-base breakdown voltage (IC= -100mA, IE=0)

Collector-emitter breakdown voltage (IC= -10mA, IB=0) (Note 1)

Emitter-base breakdown voltage (IE= -100mA, IC=0)

V(BR)CBO

V(BR)CEO

V(BR)EBO

IEBO

hFE(1)

hFE(3)

hFE(2)

hFE(4)

ICBO

VBE(sat)

VCE(sat)2

VCE(sat)1

VBE

Cob

fT

MAX

-80

-60

-5

-

100

-

80

15

100

MIN

-

150

-

-0.1

-

-0.3

-0.6

-1

-

10

-1.2

-

TYP

-

FEATURES

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-O rate flame retardant

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

* Weight: 0.008 gram

* Marking: 591

* Power dissipation

PCM :

0.5

W (Tamb=25OC)

* Collector current

ICM :

-1

A

* Collector-base voltage

V(BR)CBO :

-80

V

* Operating and storage junction temperature range

TJ,Tstg: -55OC to +150OC

FMMT591

2: "Fully ROHS compliant", "100% Sn plating (Pb-free)".

Số phần tương tự - FMMT591

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Zetex Semiconductors	FMMT591	130Kb / 2P	PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
Galaxy Semi-Conductor H...	FMMT591	244Kb / 4P	PNP Silicon Epitaxial Planar Transistor
Guangdong Kexin Industr...	FMMT591	35Kb / 1P	Medium Power Transistor
Weitron Technology	FMMT591	239Kb / 4P	General Purpose Transistor PNP Silicon
Diodes Incorporated	FMMT591	298Kb / 8P	Medium power PNP transistor in SOT23 september 2007

More results

Mô tả tương tự - FMMT591

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More results

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