BC856B datasheet(1/2 Pages) RECTRON

tên linh kiện	BC856B

Giải thích chi tiết về linh kiện	SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

PDF	2 Pages

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nhà sản xuất	RECTRON [Rectron Semiconductor]

Trang chủ	http://www.rectron.com

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FEATURES

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-O rate flame retardant

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

* Weight: 0.008 gram

SOT-23

BC856B

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

OC ambient temperature unless otherwise specified.

0.118(3.00)

0.012(0.30)

0.020(0.50)

0.003(0.08)

0.006(0.15)

0.110(2.80)

0.019(2.00)

0.071(1.80)

0.100(2.55)

0.089(2.25)

0.020(0.50)

0.012(0.30)

0.043(1.10)

0.035(0.90)

0.004(0.10)

0.000(0.00)

SOT-23 BIPOLAR TRANSISTORS

TRANSISTOR(PNP)

2007-3

ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )

DC current gain (VCE= -5V, IC= -2mA)

Collector cut-off current (VCB= -70V, IE=0)

Collector cut-off current (VCE= -60V, IB=0)

Emitter cut-off current (VEB= -5V, IC=0)

Collector-emitter saturation voltage (IC= -100mA, IB= -5mA)

Base-emitter saturation voltage (IC= -100mA, IB= -10mA)

Transition frequency (VCE= -5V, IC= -10mA, f= 100MHZ)

CHARACTERISTICS

SYMBOL

UNITS

-

-0.1

m

A

m

A

m

A

V

Collector-base breakdown voltage (IC= -10mA, IE=0)

Collector-emitter breakdown voltage (IC= -10mA, IB=0)

Emitter-base breakdown voltage (IE= -10mA, IC=0)

DEVICE MARKING

BC856B

Notes: 1. Transistor mounted on an FR4 Printed-circuit board.

3B

V(BR)CBO

V(BR)CEO

V(BR)EBO

IEBO

hFE(1)

ICBO

ICEO

VCE(sat)

VBE(sat)

fT

MAX

-80

-65

-5

-

220

100

MIN

0.055(1.40)

0.047(1.20)

-

-0.1

-

-1.1

MHZ

-0.5

475

BASE

EMITTER

COLLECTOR

*

Power dissipation

PCM :

0.225

W (Tamb=25OC) Note1

Collector current

ICM :

-0.1

A

Collector-base voltage

V(BR)CBO :

-80

V

Operating and storage junction temperature range

TJ,Tstg: -55OC to +150OC

1

2

3

2

3

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.

Số phần tương tự - BC856B

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NXP Semiconductors	BC856B	47Kb / 8P	PNP general purpose transistors 1999 Apr 12
Transys Electronics	BC856B	363Kb / 3P	PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Siemens Semiconductor G...	BC856B	271Kb / 8P	PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
Fairchild Semiconductor	BC856B	68Kb / 5P	Switching and Amplifier Applications
Diodes Incorporated	BC856B	44Kb / 3P	PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR DS11207 Rev. 12 - 2

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