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BAS85 bảng dữ liệu(PDF) 1 Page - Rectron Semiconductor |
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BAS85 bảng dữ liệu(HTML) 1 Page - Rectron Semiconductor |
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1 / 1 page ![]() RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION BAS85 MAXIMUM RATINGES ( @ TA = 25 oC unless otherwise noted ) SCHOTTKY DIODES FEATURES * Fast Switching Device(TRR<4.0nS) * Mini MELF Glass Case (SOD-80) * * * * Through-Hole Device Type Mounting Hermetically Sealed Glass Compression Bonded Construction All external surfaces are corrosion resistant and leads are readily solderable Dimensions in inches and (millimeters) RATINGS Maximum Forward Comtinuous Current @ TA=25 OC Maximum Forward Comtinuous Reverse Voltage Surge Forward Current @ tp<1s,TA=25 OC Maximum Power Dissipation @ TA=65 OC Storage Temperature Range Junction Temperature SYMBOL BAS85 mAmps V 200 30 Maximum Peak Forward Current @ TA=25 OC mAmps 300 600 200 125 -65 to + 150 mAmps mW OC OC UNITS IF VR IFM IFSM PD TSTG SOD-80 2006-3 ELECTRICAL CHARACTERISTICS ( @ TA = 25 oC unless otherwise noted ) Reverse voltage leakage current (VR=25V) Forward voltage Pulse Tesx tp<300 µs,δ<2% (IF=10mA) (IF=1mA) (IF=0.1mA) (IF=30mA) (IF=100mA) Diode capacitance (VR=1,f=1MHz) Reveres recovery time (IF=IR=10mA,IR=1mA) CHARACTERISTICS SYMBOL UNITS - 2 0.24 0.4 0.32 - 0.8 - - - 0.5 - 10 5 µA V V pF nS Reverse breakdown voltage (IR=10µA) V(BR)R IR VF CD trr MAX. - - - - TYP. 30 - - - - MIN. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. .016(0.40) .008(0.20) .142(3.6) .134(3.4) TJ |
Số phần tương tự - BAS85 |
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Mô tả tương tự - BAS85 |
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