MICROSEMI. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. MICROSEMI RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE

WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

Microsemi: 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

TAN150

150 Watts, 50 Volts, Pulsed

Avionics 960 - 1215 MHz

GENERAL DESCRIPTION

The TAN150 is a high powered COMMON BASE bipolar transistor.

It is

designed for pulsed systems in the frequency band 960-1215 MHz. The device

has gold thin-film metallization and diffused ballasting for proven highest

MTTF.

The transistor includes input and output prematch for broadband

capability.

Low thermal resistance package reduces junction temperature,

extends life.

CASE OUTLINE

55AT, Style 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @25

°C

583 W

Maximum Voltage and Current

55 V

3.5 V

15.0 A

Maximum Temperatures

Storage Temperature

-65 to +150

°C

Operating Junction Temperature

+200

°C

ELECTRICAL CHARACTERISTICS @ 25

°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Power Out

F

= 960-1215 MHz

150

W

Power Input

Vcc = 50 Volts

30

W

Power Gain

PW = 20

µsec

7.0

dB

η

c

Collector Efficiency

DF =

5%

38

%

VSWR

Load Mismatch Tolerance

F = 1090 MHz

10:1

FUNCTIONAL CHARACTERISTICS @ 25

°C

Emitter to Base Breakdown

Ie = 10 mA

3.5

V

Collector to Emitter Breakdown

Ic = 50 mA

55

V

DC – Current Gain

Vce = 5V, Ic = 1 A

10

Thermal Resistance

0.3

°C/W

NOTE 1: At rated output power and pulse conditions

.

Rev A: Updated June 2009