DYNAMIC CHARACTERISTICS

ARF1519

Symbol

C

iss

C

oss

C

rss

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Test Conditions

V

V

f = 1 MHz

MIN

TYP

MAX

4600

5600

310

350

90

120

UNIT

pF

FUNCTIONAL CHARACTERISTICS

Symbol

G

PS

η

Ψ

Test Conditions

f = 13.56MHz

V

V

P

No Degradation in Output Power

Characteristic

Common Source Amplifier Power Gain

Drain Efficiency

Electrical Ruggedness VSWR 10:1

MIN

TYP

MAX

17

20

70

75

UNIT

dB

%

Per transistor section unless otherwise specified.

V

Figure 1, Typical Capacitance vs. Drain-to-Source Voltage

.1

1

10

100 200

C

iss

C

oss

C

rss

60

50

40

30

20

10

0

0

1

2

3

4

5

6

7

V

Figure 2, Typical Transfer Characteristics

V

250μSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

T

T

T

Microsemi reserves the right to change, without notice, the specifications and information contained herein.