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APTM120H140FT1G bảng dữ liệu(PDF) 1 Page - Microsemi Corporation |
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APTM120H140FT1G bảng dữ liệu(HTML) 1 Page - Microsemi Corporation |
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1 / 5 page ![]() APTM120H140FT1G www.microsemi.com 1 – 5 79 1 4 NTC 11 810 12 3 6 Q1 Q2 5 Q4 Q3 2 Pins 3/4 must be shorted together Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 1200 V Tc = 25°C 8 ID Continuous Drain Current Tc = 80°C 6 IDM Pulsed Drain current 50 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 1.68 Ω PD Maximum Power Dissipation Tc = 25°C 208 W IAR Avalanche current (repetitive and non repetitive) 7 A Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 8™ Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Full - Bridge MOSFET Power Module VDSS = 1200V RDSon = 1.4Ω typ @ Tj = 25°C ID = 8A @ Tc = 25°C |
Số phần tương tự - APTM120H140FT1G |
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Mô tả tương tự - APTM120H140FT1G |
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