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APTM120H80FT3G bảng dữ liệu(PDF) 1 Page - Microsemi Corporation |
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APTM120H80FT3G bảng dữ liệu(HTML) 1 Page - Microsemi Corporation |
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1 / 5 page ![]() APTM120H80FT3G www.microsemi.com 1 – 5 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 1200 V Tc = 25°C 14 ID Continuous Drain Current Tc = 80°C 10 IDM Pulsed Drain current 90 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 960 m Ω PD Maximum Power Dissipation Tc = 25°C 357 W IAR Avalanche current (repetitive and non repetitive) 12 A Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 8™ Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Very low stray inductance - Symmetrical design • Kelvin source for easy drive • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Full bridge MOSFET Power Module VDSS = 1200V RDSon = 800mΩ typ @ Tj = 25°C ID = 14A @ Tc = 25°C |
Số phần tương tự - APTM120H80FT3G |
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Mô tả tương tự - APTM120H80FT3G |
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