APTM120A65FT1G datasheet(1/5 Pages) MICROSEMI

tên linh kiện	APTM120A65FT1G

Giải thích chi tiết về linh kiện	Phase leg MOSFET Power Module

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APTM120A65FT1G

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1 – 5

1

8

7

Q1

Q2

56

3

4

11

NTC

12

9

10

2

Pins 1/2 ; 3/4 ; 5/6 must be shorted together

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol

Parameter

Max ratings

Unit

VDSS

Drain - Source Breakdown Voltage

1200

V

Tc = 25°C

16

ID

Continuous Drain Current

Tc = 80°C

12

IDM

Pulsed Drain current

105

A

VGS

Gate - Source Voltage

±30

V

RDSon

Drain - Source ON Resistance

780

m

Ω

PD

Maximum Power Dissipation

Tc = 25°C

390

W

IAR

Avalanche current (repetitive and non repetitive)

14

A

Application

•

Welding converters

•

Switched Mode Power Supplies

•

Uninterruptible Power Supplies

•

Motor control

Features

•

Power MOS 8™ Fast FREDFETs

-

Low RDSon

-

Low input and Miller capacitance

-

Low gate charge

-

Fast intrinsic reverse diode

-

Avalanche energy rated

-

Very rugged

•

Very low stray inductance

-

Symmetrical design

•

Internal thermistor for temperature monitoring

•

High level of integration

Benefits

•

Outstanding performance at high frequency operation

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Solderable terminals both for power and signal for

easy PCB mounting

•

Low profile

•

RoHS Compliant

Phase leg

MOSFET Power Module

VDSS = 1200V

RDSon = 650mΩ typ @ Tj = 25°C

ID = 16A @ Tc = 25°C

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