APTM100UM65SCAVG datasheet(8/8 Pages) MICROSEMI

tên linh kiện	APTM100UM65SCAVG

Giải thích chi tiết về linh kiện	Single switch Series & SiC parallel diodes MOSFET Power Module

PDF	8 Pages

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nhà sản xuất	MICROSEMI [Microsemi Corporation]

Trang chủ	http://www.microsemi.com

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APTM100UM65SCAVG

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Typical SiC Diode Performance Curve

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0.04

0.08

0.12

0.16

0.2

0.00001

0.0001

0.001

0.01

0.1

Rectangular Pulse Duration (Seconds)

Forward Characteristics

TJ=25°C

TJ=75°C

TJ=125°C

TJ=175°C

120

180

240

00.5

1.5

22.533.5

VF Forward Voltage (V)

Reverse Characteristics

TJ=25°C

TJ=75°C

TJ=125°C

TJ=175°C

150

300

450

600

750

900

1050

1200

400

600

800 1000 1200 1400 1600

VR Reverse Voltage (V)

Capacitance vs.Reverse Voltage

1000

2000

3000

4000

5000

6000

7000

8000

100

1000

VR Reverse Voltage

Microsemi reserves the right to change, without notice, the specifications and information contained herein

Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103

5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262

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