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APTM10DHM09T3G bảng dữ liệu(PDF) 7 Page - Microsemi Corporation |
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APTM10DHM09T3G bảng dữ liệu(HTML) 7 Page - Microsemi Corporation |
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7 / 7 page ![]() APTM10DHM09T3G www.microsemi.com 7 – 7 Typical Diode Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration TJ=25°C TJ=125°C 0 50 100 150 200 0.0 0.5 1.0 1.5 VF, Anode to Cathode Voltage (V) Forward Current vs Forward Voltage IRRM vs. Current Rate of Charge 50 A 100 A 130 A 0 10 20 30 40 50 0 200 400 600 800 1000 1200 -diF/dt (A/µs) TJ=125°C VR=133V Trr vs. Current Rate of Charge 50 A 100 A 130 A 40 60 80 100 120 0 200 400 600 800 1000 1200 -diF/dt (A/µs) TJ=125°C VR=133V QRR vs. Current Rate Charge 50 A 100 A 130 A 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 200 400 600 800 1000 1200 -diF/dt (A/µs) TJ=125°C VR=133V Capacitance vs. Reverse Voltage 0 400 800 1200 1600 2000 2400 2800 3200 1 10 100 1000 VR, Reverse Voltage (V) 0 25 50 75 100 125 150 25 50 75 100 125 150 Case Temperature (°C) Max. Average Forward Current vs. Case Temp. Duty Cycle = 0.5 TJ=150°C Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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