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APTGL475DA120D3G bảng dữ liệu(PDF) 2 Page - Microsemi Corporation

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Trang chủ  http://www.microsemi.com
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APTGL475DA120D3G bảng dữ liệu(HTML) 2 Page - Microsemi Corporation

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APTGL475DA120D3G
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
5
mA
Tj = 25°C
1.8
2.2
VCE(sat)
Collector Emitter saturation Voltage
VGE = 15V
IC = 400A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 15mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
24.6
Coes
Output Capacitance
1.62
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
1.38
nF
QG
Gate charge
VGE= -8V / 15V ; VCE=600V
IC=400A
2.3
µC
Td(on)
Turn-on Delay Time
200
Tr
Rise Time
40
Td(off)
Turn-off Delay Time
400
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VCE = 600V
IC = 400A
RG = 1Ω
70
ns
Td(on)
Turn-on Delay Time
220
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
500
Tf
Fall Time
Inductive Switching (150°C)
VGE = ±15V
VCE = 600V
IC = 400A
RG = 1Ω
80
ns
Eon
Turn-on Switching Energy
TJ = 150°C
33
mJ
Eoff
Turn-off Switching Energy
VGE = ±15V
VCE = 600V
IC = 400A
RG = 1Ω
TJ = 150°C
42
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 900V
tp ≤10µs ; Tj = 150°C
1600
A
Diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Repetitive Reverse Voltage
1200
V
Tj = 25°C
250
IRRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 150°C
2000
µA
IF
DC Forward Current
TC = 80°C
400
A
Tj = 25°C
1.7
2.2
VF
Diode Forward Voltage
IF = 400A
VGE = 0V
Tj = 150°C
1.65
V
Tj = 25°C
155
trr
Reverse Recovery Time
Tj = 150°C
300
ns
Tj = 25°C
37.2
Qrr
Reverse Recovery Charge
Tj = 150°C
78
µC
Tj = 25°C
16
Err
Reverse Recovery Energy
IF = 400A
VR = 600V
di/dt = 7000A/µs
Tj = 150°C
32
mJ



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