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APTC60DAM24CT1G bảng dữ liệu(PDF) 1 Page - Microsemi Corporation |
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APTC60DAM24CT1G bảng dữ liệu(HTML) 1 Page - Microsemi Corporation |
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1 / 7 page  APTC60DAM24CT1G www.microsemi.com 1 – 7 11 CR1 Q2 10 9 12 NTC 12 3 4 6 5 Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 95 ID Continuous Drain Current Tc = 80°C 70 IDM Pulsed Drain current 260 A VGS Gate - Source Voltage ±20 V RDSon Drain - Source ON Resistance 24 m Ω PD Maximum Power Dissipation Tc = 25°C 462 W IAR Avalanche current (repetitive and non repetitive) 15 A EAR Repetitive Avalanche Energy 3 EAS Single Pulse Avalanche Energy 1900 mJ Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged • CR1 SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • Very low stray inductance • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Boost chopper Super Junction MOSFET Power Module VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C |
Số phần tương tự - APTC60DAM24CT1G |
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Mô tả tương tự - APTC60DAM24CT1G |
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