APT150DL60B2(G)

DYNAMIC CHARACTERISTICS

FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL

THERMAL AND MECHANICAL CHARACTERISTICS

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Symbol

Characteristic / Test Conditions

Min

Typ

Max

Unit

t

rr

Reverse Recovery Time

I

51

ns

t

rr

Reverse Recovery Time

I

V

408

Q

rr

Reverse Recovery Charge

2387

nC

I

RRM

Maximum Reverse Recovery Current

13

Amps

t

rr

Reverse Recovery Time

I

V

639

ns

Q

rr

Reverse Recovery Charge

7253

nC

I

RRM

Maximum Reverse Recovery Current

21

Amps

t

rr

Reverse Recovery Time

I

μs V

299

ns

Q

rr

Reverse Recovery Charge

12075

nC

I

RRM

Maximum Reverse Recovery Current

68

Amps

Symbol

Characteristic / Test Conditions

Min

Typ

Max

Unit

R

θJC

Junction-to-Case Thermal Resistance

0.26

°C/W

W

T

Package Weight

0.22

oz

5.9

g

Torque

Maximum Mounting Torque

10

lb·in

1.1

N·m

0

0.05

0.10

0.15

0.20

0.25

0.30

10

1.0

-1

RECTANGULAR PULSE DURATION (seconds)

FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION

Peak TJ = PDM x ZθJC + TC

Duty Factor D =

2

t2

t1

Note:

Dissipated Power

(Watts)

T

T

Z

impedances: Case to sink,

sink to ambient, etc. Set to

zero when modeling only

the case to junction.

0.099

0.160

0.0160

0.380

1 Continuous current limited by package lead temperature.