APT20M120JCU2

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5- 5

Typical SiC Diode Performance Curve

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

0.00001

0.0001

0.001

0.01

0.1

1

10

Rectangular Pulse Duration (Seconds)

Forward Characteristics

0

4

8

12

16

20

0

0.5

11.5

22.5

33.5

Reverse Characteristics

0

25

50

75

100

400

600

800

1000 1200 1400 1600

Capacitance vs.Reverse Voltage

0

100

200

300

400

500

600

700

1

10

100

1000

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Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103

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