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1075MP bảng dữ liệu(PDF) 1 Page - Microsemi Corporation |
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1075MP bảng dữ liệu(HTML) 1 Page - Microsemi Corporation |
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1 / 3 page ![]() Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 1075MP 75 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1075MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55FW-1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25 oC2 250 Watts Pk Maximum Voltage and Current BVces Collector to Emitter Voltage 65 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 6.5 Amps Pk Maximum Temperatures Storage Temperature - 65 to + 150 oC Operating Junction Temperature + 200 oC ELECTRICAL CHARACTERISTICS @ 25 °C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS POUT Power Out F= 1025-1150 MHz 75 W PIN Power Input Vcc = 50 Volts 13 W PG Power Gain PW = 10 µsec, DF = 1% 7.6 8.5 dB ηc Efficiency 40 % VSWR 1 Load Mismatch Tolerance F = 1090 MHz 20:1 FUNCTIONAL CHARACTERISTICS @ 25 °C BVebo Emitter to Base Breakdown Ie = 5 mA 3.5 V BVces Collector to Emitter Breakdown Ic = 15mA 65 V Hfe DC Current Gain Vce = 5V, Ic = 100 mA 20 Cob Output Capacitance Vcb = 50 V, f = 1 MHz 12 pF θjc1 Thermal Resistance 0.6 oC/W Note 1: At rated pulse conditions Rev A: Dec 2009 |
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