H5MS5132DFR datasheet(28/62 Pages) HYNIX

28 / 62 page

Rev 1.2 / Jul. 2008

Mobile DDR SDRAM 512Mbit (16M x 32bit)

H5MS5122DFR Series / H5MS5132DFR Series

DESELECT

The DESELECT function (CS = High) prevents new commands from being executed by the Mobile DDR SDRAM. The

Mobile DDR SDRAM is effectively deselected. Operations already in progress are not affected.

NO OPERATION

The NO OPERATION (NOP) command is used to perform a NOP to a Mobile DDR SDRAM that is selected (CS = Low).

This prevents unwanted commands from being registered during idle or wait states. Operations already in progress are

not affected. (see to next figure)

ACTIVE

The Active command is used to activate a row in a particular bank for a subsequent Read or Write access. The value of

the BA0,BA1 inputs selects the bank, and the address provided on A0-A13 (only 1KByte page size. If the 2KBytes page

size, A0~A12 are provided selects the row. (see to next figure)

Before any READ or WRITE commands can be issued to a bank within the Mobile DDR SDRAM, a row in that bank

must be opened. This is accomplished via the ACTIVE command, which selects both the bank and the row to be acti-

vated.

The row remains active until a PRECHARGE (or READ with AUTO PRECHARGE or WRITE with AUTO PRECHARGE) com-

mand is issued to the bank.

A PRECHARGE (or READ with AUTO PRECHARGE or WRITE with AUTO PRECHARGE) command must be issued before

opening a different row in the same bank.

(A13 is used as 1KBytes Reduced page)

A0~A13

CAS

Don't Care

CLK

CKE

BA0,BA1

Bank Address

Row Address

Don't Care

NOP Command

ACTIVE Command

RAS

A0~A13

CAS

CLK

CKE

BA0, BA1

RAS

(High)

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