H5MS5122DFR datasheet(5/62 Pages) HYNIX

5 / 62 page

Rev 1.2 / Jul. 2008

Mobile DDR SDRAM 512Mbit (16M x 32bit)

H5MS5122DFR Series / H5MS5132DFR Series

The Hynix H5MS5122DFR series has the special Low Power function of Auto TCSR (Temperature Compensated Self

Refresh) to reduce self refresh current consumption. Since an internal temperature sensor is implemented, it enables

to automatically adjust refresh rate according to temperature without external EMRS command.

Deep Power Down Mode is an additional operating mode for Low Power DDR SDRAM (Mobile DDR SDRAM). This mode

can achieve maximum power reduction by removing power to the memory array within Low Power DDR SDRAM

(Mobile DDR SDRAM). By using this feature, the system can cut off almost all DRAM power without adding the cost of

a power switch and giving up mother-board power-line layout flexibility.

All inputs are LVCMOS compatible. Devices will have a VDD and VDDQ supply of 1.8V (nominal).

The Hynix H5MS5122DFR series is available in the following package:

- 90Ball FBGA [size: 8mm x 13mm, t=1.0mm

max]

512M Mobile DDR SDRAM ORDERING INFORMATION

Part Number

Clock Frequency

Page Size

Organization

Interface

Package

H5MS5122DFR-E3M

200MHz(CL3) / 83MHz(CL2)

2KByte

(Normal)

4banks x 4Mb

x 32

LVCMOS

90 Ball FBGA

Lead & Halogen

Free

H5MS5122DFR-J3M

166MHz(CL3) / 83MHz(CL2)

H5MS5122DFR-K3M

133MHz(CL3) / 83MHz(CL2)

H5MS5122DFR-L3M

100MHz(CL3) / 66MHz(CL2)

H5MS5132DFR-E3M

200MHz(CL3) / 83MHz(CL2)

1KByte

(Reduced)

H5MS5132DFR-J3M

166MHz(CL3) / 83MHz(CL2)

H5MS5132DFR-K3M

133MHz(CL3) / 83MHz(CL2)

H5MS5132DFR-L3M

100MHz(CL3) / 66MHz(CL2)

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