TSM4404CSRL datasheet(2/6 Pages) TSC

2 / 6 page

TSM4404

30V N-Channel MOSFET

2/6

Version: A09

Electrical Specifications (Ta = 25oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID =250uA

BVDSS

Gate Threshold Voltage

VDS = VGS, ID =250µA

VGS(TH)

0.7

1.4

Gate Body Leakage

VGS = ±12V, VDS =0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = 24V, VGS =0V

IDSS

1.0

µA

VGS = 10V, ID =8.5A

VGS = 4.5V, ID =8.5A

RDS(ON)

Drain-Source On-State Resistance

VGS = 2.5V, ID =5A

mΩ

Forward Transconductance

VDS = 5V, ID =5A

gfs

Diode Forward Voltage

IS = 1A, VGS =0V

VSD

0.76

1.0

Dynamic

Total Gate Charge

9.7

Gate-Source Charge

Qgs

1.63

Gate-Drain Charge

VDS = 15V, ID = 8.5A,

VGS = 4.5V

Qgd

3.1

Input Capacitance

Ciss

857

1030

Output Capacitance

Coss

Reverse Transfer Capacitance

VDS = 15V, VGS = 0V,

f = 1.0MHz

Crss

Switching

Turn-On Delay Time

td(on)

3.3

Turn-On Rise Time

4.7

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD = 15V, RL = 1.8Ω,

ID = 1A, VGEN = 10V,

RG = 6Ω

4.1

6.2

Notes:

a. pulse test: PW ≤300µS, duty cycle ≤2%

b. For DESIGN AID ONLY, not subject to production testing.

b. Switching time is essentially independent of operating temperature.

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