TSM4N60CPRO datasheet(1/9 Pages) TSC

tên linh kiện	TSM4N60CPRO

Giải thích chi tiết về linh kiện	600V N-Channel Power MOSFET

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nhà sản xuất	TSC [Taiwan Semiconductor Company, Ltd]

Trang chủ	http://www.taiwansemi.com

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TSM4N60

600V N-Channel Power MOSFET

1/9

Version: A07

TO-220

ITO-220

TO-251

(IPAK)

TO-252

(DPAK)

General Description

The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. There devices are

well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts

base on half bridge topology.

Features

●

Robust high voltage termination

●

Avalanche energy specified

●

Diode is characterized for use in bridge circuits

●

Source to Drain diode recovery time comparable to a

discrete fast recovery diode.

Ordering Information

Part No.

Package

Packing

TSM4N60CZ C0

TO-220

50pcs / Tube

TSM4N60CI C0

ITO-220

50pcs / Tube

TSM4N60CH C5

TO-251

80pcs / Tube

TSM4N60CP RO

TO-252

2.5Kpcs / 13” Reel

Absolute Maximum Rating (Ta = 25oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

600

V

Gate-Source Voltage

VGS

±30

V

Continuous Drain Current

ID

4

A

Pulsed Drain Current

IDM

16

A

Single Pulse Drain to Source Avalanche Energy

(VDD = 50V, IAS=4A, L=27.5mH, RG=25Ω), Starting TJ = 25

oC

EAS

240

mJ

Repetitive Avalanche Energy

(Pulse width limited by junction temperature)

EAR

10

mJ

Peak Diode Recovery dv/dt

(ISD ≤ 4A, di/dt ≤ 200A/us, VDD ≤ BVDSS) Starting TJ=25ºC

dv/dt

4.5

V/ns

TO-220 / TO-251 / TO-252

70

Maximum Power Dissipation

@Ta = 25

oC

ITO-220

PD

25

W

Operating Junction Temperature

TJ

+150

oC

Operating Junction and Storage Temperature Range

TJ, TSTG

-55 to +150

oC

Block Diagram

N-Channel MOSFET

PRODUCT SUMMARY

VDS (V)

RDS(on)(Ω)

ID (A)

600

2.5 @ VGS =10V

2

Pin Definition:

1. Gate

2. Drain

3. Source

Số phần tương tự - TSM4N60CPRO

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Taiwan Semiconductor Co...	TSM4N60CPRO	369Kb / 11P	600V N-Channel Power MOSFET
VBsemi Electronics Co.,...	TSM4N60CPRO	1Mb / 9P	Power MOSFET
Taiwan Semiconductor Co...	TSM4N60CPROG	369Kb / 11P	600V N-Channel Power MOSFET

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Mô tả tương tự - TSM4N60CPRO

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Taiwan Semiconductor Co...	TSM2N60	459Kb / 8P	600V N-Channel Power MOSFET
Taiwan Semiconductor Co...	TSM2N60S	328Kb / 8P	600V N-Channel Power MOSFET
Unisonic Technologies	18N60	147Kb / 3P	600V N-CHANNEL POWER MOSFET
Taiwan Semiconductor Co...	TSM1NB60	196Kb / 8P	600V N-Channel Power MOSFET
Taiwan Semiconductor Co...	TSM4NB60	575Kb / 11P	600V N-Channel Power MOSFET
Jiangsu Changjiang Elec...	CJD04N60	1Mb / 4P	600V N-Channel Power MOSFET
DIYI Electronic Technol...	6N60	1Mb / 8P	600V N-Channel Power MOSFET
	7N60	2Mb / 9P	600V N-Channel Power MOSFET
	10N60	2Mb / 9P	600V N-Channel Power MOSFET
Jiangsu Changjiang Elec...	CJP04N60	1Mb / 4P	600V N-Channel Power MOSFET

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Số phần tương tự - TSM4N60CPRO

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