MCP6031-ESLASHST datasheet(5/34 Pages) MICROCHIP

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DS22041B-page 5

MCP6031/2/3/4

TEMPERATURE SPECIFICATIONS

1.1

Test Circuits

The test circuits used for the DC and AC tests are

shown in Figure 1-2 and Figure 1-3. The bypass

capacitors are laid out according to the rules discussed

Section 4.6 “Supply Bypass”.

FIGURE 1-2:

AC and DC Test Circuit for

Most Non-Inverting Gain Conditions.

FIGURE 1-3:

AC and DC Test Circuit for

Most Inverting Gain Conditions.

Electrical Characteristics: Unless otherwise indicated, V

DD = +1.8V to +5.5V and VSS = GND.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Temperature Ranges

Operating Temperature Range

-40

—

+125

°C

Note

Storage Temperature Range

-65

—

+150

°C

Thermal Package Resistances

Thermal Resistance, 5L-SOT-23

—256

—

°C/W

Thermal Resistance, 8L-DFN (2x3)

—84

—

°C/W

Thermal Resistance, 8L-SOIC

—163

—

°C/W

Thermal Resistance, 8L-MSOP

—206

—

°C/W

Thermal Resistance, 14L-SOIC

—

120

—

°C/W

Thermal Resistance, 14L-TSSOP

—

100

—

°C/W

Note:

The internal junction temperature (TJ) must not exceed the absolute maximum specification of +150°C.

VDD

MCP603X

VOUT

VIN

VDD/2

2.2 µF

0.1 µF

VDD

MCP603X

VOUT

VIN

VDD/2

2.2 µF

0.1 µF

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