CHA3092

20-33GHz Medium Power Amplifier

Ref. : DSCHA30920356 21-Dec.-00

2/7

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics for Broadband Operation

Tamb = +25°C, Vd1,2,3,4 = 3.5V recommended

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range (1)

20

33

GHz

G

Small signal gain (1)

20

22

dB

∆G

Small signal gain flatness (1)

±1.0

dB

Is

Reverse isolation (1)

50

dB

P1dB

Pulsed output power at 1dB compression (1)

18

20

dBm

P03

Output power at 3dB gain compression

20

23

dBm

IP3

3

29

dBm

PAE

Power added efficiency at saturation

10

%

VSWRin

Input VSWR (1)

2.0:1

VSWRout

Output VSWR (1)

3.0:1

NF

Noise figure

10.0

dB

Vdet

Detected voltage: at 26GHz @ Pout=20dBm (2)

1

V

300

400

mA

(1) These values are representative for pulsed on-wafer measurements that are made without

bonding wires at the RF ports. In the case of a jig or a module CW mode operation, the typical

output power may be around 2dB less.

(2) Voltage across an external 10kOhm parallel resistor connected to the voltage detector pad.

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol

Parameter

Values

Unit

Vds

Drain bias voltage_small signal (2)

4.0

V

Ids

Drain bias current_small signal

400

mA

Vgs

Gate bias voltage

-2 to +0.4

V

Vdg

Negative Drain Gate voltage (= Vds – Vgs)

+5

V

Pin

Maximum continuous input power (2)

Maximum peak input power overdrive (3)

+4

+15

dBm

dBm

Ta

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +155

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) 3.5V recommended for up to a max of 3dB gain compression.

(3) Duration < 1s.