CHA2192

Ref. : DSCHA21928155

1/6

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

24-26.5GHz Low Noise Amplifier

GaAs Monolithic Microwave IC

Description

The CHA2192 is a two stages low noise

amplifier. It is designed for a wide range of

applications,

from

military

to

commercial

communication systems. The backside of the

chip is both RF and DC grounds. This helps

simplify the assembly process.

The circuit is manufactured with a HEMT

process, 0.25µm gate length, via holes through

the substrate, air bridges and electron beam

gate lithography.

It is available in chip form.

Main Features

■ 1.8 dB noise figure

■ 15 dB ± 1dB gain

■ 10 dBm output power

■ Very good broadband input matching

■ DC power consumption, 40mA @ 3.5V

■ Chip size :

1.67 x 0.97 x 0.10 mm

0

2

4

6

8

10

12

14

16

18

20

16

18

20

22

24

26

28

30

32

34

Frequency ( GHz )

NF

Gain

Typical on Wafer Measurements

Main Characteristics

Tamb. = 25°C

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

24

26.5

GHz

G

Small signal gain

14

15

dB

NF

Noise figure

1.8

2.0

dB

P1dB

Output power at 1dB gain compression

8

10

dBm

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !