CHA2190

20-30GHz Low Noise Amplifier

Ref :

DSCHA21902036 -05-Feb.-02-

2/9

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics

Tamb = +25°C, Vd = +4V (On wafer)

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

20

30

Ghz

G

Gain (1)

13

15

dB

∆G

Gain flatness (1)

± 0.5

± 1

dB

NF

Noise figure (1)

2.2

3

dB

VSWRin

Input VSWR (1)

3.0:1

VSWRout

Ouput VSWR (1)

3.0:1

IP3

3rd order intercept point

20

dBm

P1dB

Output power at 1dB gain compression (2)

11

dBm

Id

Drain bias current (3)

50

70

mA

(1) These values are representative of wafer measurements without bonding wire at the RF ports.

(2)This value is a typical value when Vd=4V Vg1=Vg2=0V or not connected and can be increased

See chip biasing option page 8

(3) This current is the typical value for low noise and low current consumption biasing :

Vd=4V , Vg1=Vg2=0V or not connected.

Tamb = +25°C

Symbol

Parameter

Values

Unit

Vd

Vg

Drain bias voltage (6)

Vg1 and Vg2 max

4.5

+1

V

V

Pin

Maximum peak input power overdrive (5)

15

dBm

Top

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +125

°C

(4) Operation of this device above anyone of these paramaters may cause permanent damage.

(5) Duration < 1s.

(6) See chip biasing options page 8/9