CHA2066RBF

Ref. : DSCHA2066RBF2317 -13-Nov.-02

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

10-16GHz Self biased Low Noise Amplifier

GaAs Monolithic Microwave IC in SMD leadless package

Description

The monolithic microwave IC (MMIC) in the

package is a two-stage self biased wide

band monolithic low noise amplifier.

The MMIC is manufactured with a standard

PM-HEMT process: 0.25µm gate length,

via holes through the substrate, air bridges

and electron beam gate lithography.

It is supplied in a new SMD leadless chip

carrier.

Main Features

■ Broad band performance: 10-16GHz

■ Gain = 15dB (typical)

■ Noise Figure 2.0dB (typical)

■ Return loss < -6dB

■ SMD leadless package

■ Dimensions: 5.08 x 5.08 x 0.97 mm

3

SMD Package Dimensions

"Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic Semiconductors. It is indicated

by a triangle on the package lid. Starting with PIN 1 the other pads are numbered counter-clockwise (front-side view). ATTENTION: The dot on the backside of the

package

(i.e.

side

with

metallic

pads)

is

just

for

fabrication

purposes

and

does

NOT

indicate

the

location

of

PIN

1."