73S1210F-68IMSLASHFSLASHP datasheet(13/126 Pages) TERIDIAN

13 / 126 page

DS_1210F_001

73S1210F Data Sheet

Rev. 1.4

Table 3: Flash Special Function Registers

SFR

Address

R/W

Description

ERASE

0x94

This register is used to initiate either the Flash Mass Erase cycle or the

Flash Page Erase cycle. Specific patterns are expected for ERASE in

order to initiate the appropriate Erase cycle (default = 0x00).

0x55 – Initiate Flash Page Erase cycle. Must be proceeded by a write

to PGADDR @ SFR 0xB7.

0xAA – Initiate Flash Mass Erase cycle. Must be proceeded by a write

to FLSH_MEEN @ SFR 0xB2 and the debug port must be

enabled.

Any other pattern written to ERASE will have no effect.

PGADDR

0xB7

R/W

Flash Page Erase Address register containing the flash memory page

address (page 0 through 127) that will be erased during the Page Erase

cycle (default = 0x00). Note: the page address is shifted left by one bit

(see detailed description above).

Must be re-written for each new Page Erase cycle.

FLSHCTL

0xB2

R/W

Bit 0 (FLSH_PWE): Program Write Enable:

0 – MOVX commands refer to XRAM Space, normal operation (default).

1 – MOVX @DPTR,A moves A to Program Space (Flash) @ DPTR.

This bit is automatically reset after each byte written to flash. Writes to

this bit are inhibited when interrupts are enabled.

Bit 1 (FLSH_MEEN): Mass Erase Enable:

0 – Mass Erase disabled (default).

1 – Mass Erase enabled.

Must be re-written for each new Mass Erase cycle.

R/W

Bit 6 (SECURE):

Enables security provisions that prevent external reading of flash

memory and CE program RAM. This bit is reset on chip reset and may

only be set. Attempts to write zero are ignored.

Internal Data Memory: The Internal data memory provides 256 bytes (0x00 to 0xFF) of data memory.

The internal data memory address is always one byte wide and can be accessed by either direct or

indirect addressing. The Special Function Registers occupy the upper 128 bytes. This SFR area is

available only by direct addressing. Indirect addressing accesses the upper 128 bytes of Internal

RAM.

The lower 128 bytes contain working registers and bit-addressable memory. The lower 32 bytes form

four banks of eight registers (R0-R7). Two bits on the program memory status word (PSW) select which

bank is in use. The next 16 bytes form a block of bit-addressable memory space at bit addresses 0x00-

0x7F. All of the bytes in the lower 128 bytes are accessible through direct or indirect addressing. Table 4

shows the internal data memory map.

73S1210F-68IM/F/P bảng dữ liệu(PDF) 13 Page - Teridian Semiconductor Corporation

73S1210F-68IM/F/P bảng dữ liệu(HTML) 13 Page - Teridian Semiconductor Corporation

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

bảng dữ liệu tải về

Link URL