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APTM120VDA57T3G bảng dữ liệu(PDF) 1 Page - Microsemi Corporation

tên linh kiện APTM120VDA57T3G
Giải thích chi tiết về linh kiện  Dual Boost chopper MOSFET Power Module
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nhà sản xuất  MICROSEMI [Microsemi Corporation]
Trang chủ  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM120VDA57T3G bảng dữ liệu(HTML) 1 Page - Microsemi Corporation

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APTM120VDA57T3G
www.microsemi.com
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30
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32
31
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19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
17
ID
Continuous Drain Current
Tc = 80°C
13
IDM
Pulsed Drain current
68
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
684
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
390
W
IAR
Avalanche current (repetitive and non repetitive)
22
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 1200V
RDSon = 570mΩ typ @ Tj = 25°C
ID = 17A @ Tc = 25°C
Application
•
AC and DC motor control
•
Switched Mode Power Supplies
•
Power Factor Correction (PFC)
•
Interleaved PFC
Features
•
Power MOS 7® MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
•
Kelvin source for easy drive
•
Very low stray inductance
-
Symmetrical design
•
Internal thermistor for temperature monitoring
•
High level of integration
Benefits
•
Outstanding performance at high frequency operation
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Solderable terminals both for power and signal for
easy PCB mounting
•
Low profile
•
Each leg can be easily paralleled to achieve a single
boost of twice the current capability
•
RoHS Compliant
Dual Boost chopper
MOSFET Power Module


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