APTC90VDA12T1G datasheet(2/6 Pages) MICROSEMI

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APTC90VDA12T1G

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

VGS = 0V,VDS = 900V

Tj = 25°C

100

IDSS

Zero Gate Voltage Drain Current

VGS = 0V,VDS = 900V

Tj = 125°C

500

µA

RDS(on)

Drain – Source on Resistance

VGS = 10V, ID = 26A

100

120

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 3mA

2.5

3.5

IGSS

Gate – Source Leakage Current

VGS = ±20 V, VDS = 0V

100

Dynamic Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Ciss

Input Capacitance

6.8

Coss

Output Capacitance

VGS = 0V ; VDS = 100V

f = 1MHz

0.33

Total gate Charge

270

Qgs

Gate – Source Charge

Qgd

Gate – Drain Charge

VGS = 10V

VBus = 400V

ID = 26A

115

Td(on)

Turn-on Delay Time

Rise Time

Td(off)

Turn-off Delay Time

400

Fall Time

Inductive Switching (125°C)

VGS = 10V

VBus = 600V

ID = 26A

RG = 7.5Ω

Eon

Turn-on Switching Energy

1.5

Eoff

Turn-off Switching Energy

Inductive switching @ 25°C

VGS = 10V ; VBus = 600V

ID = 26A ; RG = 7.5Ω

0.75

Eon

Turn-on Switching Energy

2.1

Eoff

Turn-off Switching Energy

Inductive switching @ 125°C

VGS = 10V ; VBus = 600V

ID = 26A ; RG = 7.5Ω

0.85

Chopper diode ratings and characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

VRRM

Maximum Peak Repetitive Reverse Voltage

1200

Tj = 25°C

100

IRM

Maximum Reverse Leakage Current

VR=1200V

Tj = 125°C

500

µA

DC Forward Current

Tc = 80°C

IF = 30A

2.6

3.1

IF = 60A

3.2

Diode Forward Voltage

IF = 30A

Tj = 125°C

1.8

Tj = 25°C

300

trr

Reverse Recovery Time

Tj = 125°C

380

Tj = 25°C

360

Qrr

Reverse Recovery Charge

IF = 30A

VR = 800V

di/dt=200A/µs

Tj = 125°C

1700

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