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ADL5802ACPZ-R7 bảng dữ liệu(PDF) 1 Page - Analog Devices

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Dual Channel, High IP3,
100 MHz to 6 GHz Active Mixer
ADL5802
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityisassumedbyAnalogDevices for its use,norforanyinfringements ofpatents or other
rightsofthirdpartiesthat mayresult fromitsuse.Specificationssubjecttochangewithoutnotice. No
license isgranted by implication or otherwise under anypatent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2009 Analog Devices, Inc. All rights reserved.
FEATURES
Power conversion gain of 1.6 dB
Wideband RF, LO, and IF ports
SSB noise figure of 11 dB
Input IP3 of 28 dBm
Input P1dB of 12 dBm
Typical LO drive of 0 dBm
Low LO leakage
Single supply operation: 5 V @ 240 mA
Exposed paddle, 4 mm × 4 mm, 24-lead LFCSP package
APPLICATIONS
Cellular base station receivers
Main and diversity receiver designs
Radio link downconverters
FUNCTIONAL BLOCK DIAGRAM
GND
ENBL
LOIP LOIN
VPOS
GND
OP2+
RF1–
RF1+
VPOS
7
8
15
16
17
18
21
22
23
ADL5802
19
20
RF2–
GND
13
14
GND VSET
GND
GND
GND
GND
RF2+
OP2–
VPOS
GND
OP1+
OP1–
6
5
4
3
2
1
24
9
10
11
12
IP3
BIAS
Figure 1.
GENERAL DESCRIPTION
The ADL5802 uses high linearity, double-balanced, active mixer
cores with integrated LO buffer amplifiers to provide high
dynamic range frequency conversion from 100 MHz to 6 GHz.
The mixers benefit from a proprietary linearization architecture
that provides enhanced input IP3 performance when subject to
high input levels. A bias adjust feature allows the input linearity,
SSB noise figure, and dc current to be optimized using a single
control pin. The high input linearity allows the device to be used
in demanding cellular applications where in-band blocking
signals may otherwise result in degradation in dynamic perform-
ance. The balanced active mixer arrangement provides superb
LO to RF and LO to IF leakage, typically better than −30 dBm.
The IF outputs are designed for a 200 Ω source impedance and
provide a typical voltage conversion gain of 7.6 dB when loaded
into a 200 Ω load.
The ADL5802 is fabricated using a SiGe high performance IC
process. The device is available in a compact 4 mm × 4 mm,
24-lead LFCSP package and operates over a −40°C to +85°C
temperature range. An evaluation board is also available.


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