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A
Ac
cttiiv
ve
e D
Do
ow
wn
n
M
Miix
xe
er
r
M
MD
D1
18
89
91
1
▪ Tel : 82-31-250-5011
▪ All specifications may change without notice.
▪ rfsales@rfhic.com
▪ Version 5.05
Product Features
Application
• Integrated Monolithic GaAs Mixer Package Module
• High Reliability
• Lower Manufacturing Cost
• Higher Productivity
• Very Low Noise Figure & Low Distortion
• Repeater
• Base Station
• RF Sub-Systems
Description
The IC operates from a positive +5V rail consuming 145 mA of current while only requiring a 2±2 dBm LO drive.
The MCM is implemented with reliable and mature GaAs MESFET technology.
Specifications
(Operating Temperature: -30
°C~+70°C)
Part
Number
RF
Frequency
(MHz)
IF
Frequency
(MHz)
Conversion
Gain
(dB)
OIP3
(dBm)
IIP3
(dBm)
NF
(dB)
Output
P1dB
(dB)
LO to IF
Leakage
(dBm)
RF to IF
Leakage
(dBm)
1700~1820
10
26
16
MD1891
1820~1920
50~200
9
26
17
8.5
10
-16
-20
Test Conditions : Ta=25
°C, Vdd=5V, PLO2dBm, IF=70MHz
Functional Diagram
Functional Pin Layout
Package Dimensions (Type: HY-2)
Top
Side
Recommended Pattern
Pin No.
Function
1 or 14
Vdd+5V
5
RF In
9
LO In
12
IF Out
2,3,4,6,7,8,10,11,13
Ground
1
1
5
9
12
14
7
8
14
Package Type: HY-2
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