NTGD3147F datasheet(5/7 Pages) ONSEMI

tên linh kiện	NTGD3147F

Giải thích chi tiết về linh kiện	Power MOSFET and Schottky Diode??0 V, ??.5 A, P?묬hannel with Schottky Barrier Diode, TSOP??

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NTGD3147F

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TYPICAL PERFORMANCE CHARACTERISTICS

QG, TOTAL GATE CHARGE (nC)

Figure 7. Gate−to−Source and

Drain−to−Source Voltage versus Total Charge

VDS = −10 V

ID = −2.2 A

TJ = 25°C

100

td(off)

td(on)

VGS = −4.5 V

VDD = −10 V

ID = −1.0 A

Figure 8. Resistive Switching Time

Variation versus Gate Resistance

RG, GATE RESISTANCE (W)

0.1

0.4

0.6

0.8

1.0

1.2

Figure 9. Diode Forward Voltage versus

Current

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

VGS = 0 V

TJ = 150°C

125°C

0.01

0.1

100

RDS(on) Limit

Thermal Limit

Package Limit

1 ms

10 ms

Figure 10. Threshold Voltage

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS = −12 V

Single Pulse

TC = 25°C

Figure 11. Single Pulse Maximum Power

Dissipation

Figure 12. Maximum Rated Forward Biased

Safe Operating Area

0.6

0.8

1.0

1.2

0.5

−50

−25

100

125

150

TJ, JUNCTION TEMPERATURE (°C)

ID = −250 mA

0.7

0.9

1.1

0.4

0.001

0.01

0.1

100

1000

SINGLE PULSE TIME (s)

−VDS

−VGS

QGS

QDS

0.5

0.7

0.9

1.1

25°C

−55°C

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