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MBRF10L60CT bảng dữ liệu(PDF) 2 Page - ON Semiconductor

tên linh kiện MBRF10L60CT
Giải thích chi tiết về linh kiện  SWITCHMODE??Power Rectifier 60 V, 10 A
PDF  7 Pages
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nhà sản xuất  ONSEMI [ON Semiconductor]
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MBRF10L60CT bảng dữ liệu(HTML) 2 Page - ON Semiconductor

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MBR10L60CT, MBRF10L60CT
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MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60
V
Average Rectified Forward Current
(Per Leg)
(Rated VR) TC = 140°C
(Per Device)
IF(AV)
5
10
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
200
A
Operating Junction Temperature (Note 1)
TJ
−55 to +150
°C
Storage Temperature
Tstg
−65 to +175
°C
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Thermal Resistance
MBR10L60CT
Junction−to−Case
Junction−to−Ambient
MBRF10L60CT
Junction−to−Case
Junction−to−Ambient
RqJC
RqJA
RqJC
RqJA
2.8
70
5.7
75
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Rating
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 5 A, TC = 25°C)
(IF = 5 A, TC = 125°C)
(IF = 10 A, TC = 25°C)
(IF = 10 A, TC = 125°C)
vF
0.49
0.43
0.60
0.53
0.57
0.49
0.66
0.61
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR
77
33
220
60
mA
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
DEVICE ORDERING INFORMATION
Device Order Number
Package Type
Shipping
MBR10L60CTG
TO−220AB
(Pb−Free)
50 Units / Rail
MBRF10L60CTG
TO−220FP
(Pb−Free)
50 Units / Rail



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