RB751V-40 datasheet(1/4 Pages) COMCHIP

tên linh kiện	RB751V-40

Giải thích chi tiết về linh kiện	SMD Schottky Barrier Diode

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Io = 30 mA

VR = 30 Volts

RB751V-40

SMD Schottky Barrier Diode

Page 1

QW-BB029

REV:A

SMD Diodes Specialist

A

mA

V

0.2

30

40

IO

VR

VRRM

IFSM

8.3ms single half sine-wave superimposed

on rate load(JEDEC method)

°C

+125

-40

TSTG

Tj

Storage temperature

Junction temperature

Average forward current

Reverse voltage

Repetitive peak reverse voltage

Forward current,surge peak

Parameter

Conditions

Symbol Min Typ Max Unit

uA

V

0.5

0.37

IR

VF

Reverse current

Forward voltage

Parameter

Conditions

Symbol Min Typ Max Unit

VR = 30 V

IF = 1 mA

Maximum Rating (at TA=25°C unless otherwise noted)

Electrical Characteristics (at TA=25°C unless otherwise noted)

Features

Low current rectifier.

Low voltage, low inductance.

For power supply.

Mechanical data

Case: SOD-323 Standard package, molded

plastic.

Terminals: Gold plated, solderable per MIL-

STD-750D, method 2026.

Mounting position: Any.

(RoHS Device)

Comchip Technology CO., LTD.

Dimensions in inches and (millimeter)

SOD-323

0.071 1.80

0.063(1.60)

(

)

0.006 0.15

(

)Max.

0.039(1.00)Max.

0.106 2.70

0.098(2.50)

(

)

0.055 1.40

0.047(1.20)

(

)

0.019 0.475

(

)REF

0.014 0.35

0.010(0.25)

(

)

0.004(0.10)Max.

pF

2

CT

Junction capacitance

VR = 1V,f=1MHz

Số phần tương tự - RB751V-40

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Rohm	RB751V-40	62Kb / 2P	Schottky barrier diode
Rohm	RB751V-40	139Kb / 4P	Schottky barrier diode
Taiwan Semiconductor Co...	RB751V-40	277Kb / 2P	0.03AMP Surface Mount Schottky Barrier Diode
Pan Jit International I...	RB751V-40	69Kb / 3P	SURFACE MOUNT SCHOTTKY DIODES
TRANSYS Electronics Lim...	RB751V-40	70Kb / 1P	Schottky Diodes

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Mô tả tương tự - RB751V-40

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