2SC5658M3T5G datasheet(2/4 Pages) ONSEMI

tên linh kiện	2SC5658M3T5G

Giải thích chi tiết về linh kiện	NPN Silicon General Purpose Amplifier Transistor

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2SC5658M3T5G, 2SC5658RM3T5G

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ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristic

Symbol

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0)

V(BR)CBO

−

Vdc

Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)

V(BR)CEO

−

Vdc

Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0)

V(BR)EBO

5.0

−

Vdc

Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0)

ICBO

−

0.5

Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0)

IEBO

−

0.5

Collector-Emitter Saturation Voltage (Note 2)

(IC = 60 mAdc, IB = 5.0 mAdc)

VCE(sat)

−

0.4

Vdc

DC Current Gain (Note 2)

(VCE = 6.0 Vdc, IC = 1.0 mAdc)

2SC5658M3T5G

(VCE = 6.0 Vdc, IC = 1.0 mAdc)

2SC5658RM3T5G

hFE

120

215

−

560

375

−

Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)

−

180

−

MHz

Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1.0 MHz)

COB

−

2.0

−

2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.

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