IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXFK 55N50F

IXFX 55N50F

Pulse Width - Seconds

0.001

0.01

0.1

1

V

0

5

10

15

20

25

30

250

500

1000

2500

5000

10000

Gate Charge - nC

0

50

100

150

200

250

300

0

5

10

15

Crss

Coss

Ciss

V

I

f = 1MHz

V

0.2

0.4

0.6

0.8

1.0

0

5

10

15

20

25

T

T

Single Pulse

Fig. 7. Gate Charge Characteristic Curve

Fig. 8. Capacitance Curves

Fig. 9. Source Current vs. Source to Drain Voltage

Fig. 10. Thermal Impedance